Category Archives: Progress Reports

Research This summer two major research milestones were reached: a) predicted diodic electric fields were experimentally verified; and b) the fields were shown to be dischargeable and rechargeable. These are the two most critical physical requirements for our proposed second … Continue reading →

Research In July, another major milestone was reached in our second law research. Recall that in June experimental evidence for the diodic electric fields critical to Paradigm technology was established at the Stanford University Nanocharacterization Lab (SNL). Two standard, state-of-the-art … Continue reading →

Research June was a successful month. The fabrication of our two-dimensional silicon diodic structures were completed in late May. The dies were examined by Sheehan at UC Santa Barbara’s nanofabrication lab on Friday, May 28. The final devices were delivered … Continue reading →

Research The fabrication of our two-dimensional silicon diodic structures has been completed. The dies were examined by Sheehan at UC Santa Barbara’s nanofabrication lab on Friday, May 28. Our fabricator, Dr. Nihat Okulan (Advanced NanoStructures) plans to ship the dies … Continue reading →

Research After an initial stage of fabrication at UC Santa Barbara in early April, our silicon-on-insulator (SOI) wafers (with suites of two-dimensional diodic structures) were sent out for coating with n-type poly-silicon, followed by planarization. (Micrographs of early-stage production steps … Continue reading →

Research The silicon chips with suites of two-dimensional diodic structures are now being fabricated at UC Santa Barbara. (Please see attached micrographs of early-stage production steps: ParadigmMarch25Fabrication.xls.) These chips will be used to test the key physical processes behind our … Continue reading →

Research In February we finalized the designs for our two-dimensional diodic structures on silicon substrates. (Please see January and February reports for details.) These will allow us to conduct a suite of experiments to test (and, hopefully, demonstrate) the fundamental … Continue reading →

Research Until recently, Paradigm’s research goal has been to build a full, three-dimensional (3D) self-switching silicon device. However, as discussed in the January report, the key physical process – the sequential discharge and recharge of thermally-generated electric fields – can … Continue reading →

Research Paradigm’s research program has bifurcated. For the last six months we prepared to fabricate a second silicon prototype. The design is complete, numerical modelings of its electrical and mechanical characteristics have been conducted, optical masks and silicon wafers have … Continue reading →

Research The design for the second silicon prototype is now complete. Optical masks are being ordered and should be completed in about two weeks. Silicon fabrication will be conducted during December 2009 and January 2010. The final design reflects significant … Continue reading →

Research The design for the second silicon prototype was finalized in October, based on multiple meetings with Dr. Okulan (Advanced NanoStructures). The final design requires fewer process steps; therefore, it should be less prone to fabrication missteps and should cost … Continue reading →

Research Since early July, Sheehan has been meeting with Dr. Okulan of Advanced NanoStructures to work out design changes for the second prototype. What we hope to be a final design meeting is scheduled for October 8, after which microfabrication … Continue reading →

Research Dr. Okulan of Advanced NanoStructures continues to work out design changes for the computer mask files for our second silicon prototype. Although he anticipated finishing in early in August, critical design features were overlooked and are being corrected. Once … Continue reading →

In July progress was made toward the second-generation prototype, and efforts continued in fundraising. Research As described in the last report, the first prototype suffered from design and production flaws that rendered it untenable. We believe these limitations will be … Continue reading →

Prototype 1: Design and Production Flaws (July 2009) Paradigm Energy Research Corporation The following is a summary of design and production flaws in Paradigm’s first prototype and the measures that will be taken to overcome them in with the second … Continue reading →

June was a watershed month for device testing and design, for proposal writing and patent protection. The principal finding was this: The first silicon prototype device will not operate as intended (details below).  A second prototype is needed. The design … Continue reading →

Assembly of the apparatus for second law challenge tests began at CINT (Albuquerque) in March. Work has been in hiatus during April due to academic responsibilities of both Drs. Sheehan and Wright. Lab work will resume in late May (2009), … Continue reading →

Assembly of the apparatus for the second law challenge tests was begun at CINT (Albuquerque) the week of 9 March, 2009. Assembly went well and according to plan; no major obstacles were encountered. Sheehan traveled to CINT where the major … Continue reading →

As of 5 March 2009, the apparatus for the second law challenge tests is complete. Assembly of the apparatus at CINT (Albuquerque) will begin in the second week of March, 2009. As described previously, the apparatus consists of three major … Continue reading →

As of 1 February 2009, the first prototype silicon devices for the second law challenge tests have been successfully completed. The support equipment is nearing completion. Assembly of the apparatus at CINT (Albuquerque) has been scheduled for the second week … Continue reading →

As of 1 January 2009, the experimental apparatus and support equipment for the second law challenge tests are roughly 75% complete. We expect full completion by 10 January 2009. As indicated in our December 2008 report, the apparatus consists of … Continue reading →

In November, 2008, experimental apparatus for the second law challenge torsional oscillator underwent final design changes and construction on it began. The apparatus consists of three major parts: (a) the p-n diode silicon torsional oscillator; (b) a Faraday cage (electrostatic … Continue reading →